Search results for "plasma deposition"
showing 3 items of 3 documents
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…
Surface modification of AISI-304 steel by ZnO synthesis using cathodic cage plasma deposition
2021
Abstract Zinc-oxide (ZnO), a solid lubricant coating, can increase the wear resistance of steels by working as a self-lubricant. In this study, ZnO film is synthesized using the cathodic cage plasma deposition (CCPD) technique, using galvanized steel cathodic cage (steel cage with zinc coating). The effect of gas composition (H2 is added in Ar-O2) is investigated to optimize the film properties. The surface hardness is increased more than twice in each processing condition. The deposited film shows ZnO phases for samples treated with low hydrogen contents and a combination of ZnO and magnetite phase (Fe3O4) with higher hydrogen contents. The thickness of film reduced from 1.28 μm to 0.5 μm …
Optical active centres in ZnO samples
2006
Abstract In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk…